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Teilenummer | AP02N40P |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
AP02N40P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
400V
5Ω
G ID 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The good thermal performance and low package
cost, Contribute to its wide industry application.
G
DS
TO-220(P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
400
+30
1.6
1
3
33
5
1
-55 to 150
-55 to 150
Value
3.8
62
Units
V
V
A
A
A
W
mJ
A
℃
℃
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
200901203
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP02N40P Schematic.PDF ] |
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