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Teilenummer | AP9974GS-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP9974GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9974GP) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
G
DS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
EAS
TSTG
TJ
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
60
+20
72
46
300
104
0.8
45
-55 to 150
-55 to 150
60V
12mΩ
72A
TO-263(S)
TO-220(P)
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
40
62
Units
℃/W
℃/W
℃/W
1
201109272
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP9974GS-HF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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