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PDF SD690XS Data sheet ( Hoja de datos )

Número de pieza SD690XS
Descripción NON-ISOLATED LED LIGHTING DRIVE IC
Fabricantes SILAN MICROELECTRONICS 
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No Preview Available ! SD690XS Hoja de datos, Descripción, Manual

SD690XS_Datasheet
NON-ISOLATED LED LIGHTING DRIVE IC WITH BUILT-IN HIGH-VOLTAGE
MOSFET, HIGH PFC AND HIGH CONSTANT CURRENT ACCURACY
DESCRIPTION
SD690XS is designed for non-isolated LED driving with floating
Buck structure and built-in 600V MOSFET. With this structure,
inductor current is sensed and closed-loop is formed with the
internal error amplifier for high constant current accuracy and
high input/output regulation rate. Also, high PF in full range is
available as its own PFC control. Boundary Conduction mode is
adopted for decreasing switching loss and improving the
conversion efficiency.
SD690XS integrates various protections, such as output open
circuit protection, output short circuit protection, cycle-by-cycle
current limit protection, over temperature protection and VCC
over voltage protection.
The start-up current and operating current are low and highlight APPLICATION
LED can be driven with high efficiency in full range
(85VAC~265VAC).
Bulb Lamp
T5/T8 LED Lamp
FEATURES
Various LED Lighting
Proprietary constant control method (Patent)
Built-in 600V MOSFET
Constant current with high accuracy for LED (<±3%)
PF>0.9 in full voltage range
Boundary-Conduction mode
LED short circuit protection (Patent)
LED open circuit protection
VCC over/under voltage protection
Over temperature protection
Over current protection
ORDERING INFORMATION
Part No.
SD6901STR
SD6902STR
SD6904STR
Package
SOP-7-225-1.27
SOP-7-225-1.27
SOP-7-225-1.27
Marking
SD6901S
SD6902S
SD6904S
Material
Halogen free
Halogen free
Halogen free
Packing
Tape&Reel
Tape&Reel
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.4
2013.04.07
Page 1 of 7

1 page




SD690XS pdf
Silan
Microelectronics
SD690XS_Datasheet
constant current accuracy and high regulation rate.
CS voltage and 0.17V reference voltage are the inputs of Gm amplifier, then the output is integrated
through external Comp capacitor. The on time of MOSFET is controlled by Comp voltage for adjusting
output current.
Current detection and LEB
With the cycle-by-cycle current limit function, Power MOSFET will be turned off if CS voltage exceeds a
certain value. System still works and Power MOSFET is turned on in the next period.
During LEB, limit comparator stops, and MOSFET is on during this time.
Gate driver
GATE Pin is connected to gate of external MOSFET for controlling its on/off. Too weak driving of GATE will
increase power dissipation on MOSFET and too strong driving will bring EMI. A good tradeoff is achieved
through the totem pole gate drive design with appropriate output ability and dead time control.
Output high level of GATE is clamped at 15V to protect external MOSFET.
VCC over voltage protection
Over voltage protection occurs if voltage at VCC is high, MOSFET is off and the system restarts
automatically.
Output over voltage protection
Output voltage is reflected to pin ZCD through resistor divider. When ZCD voltage is higher than the over
voltage protection threshold value by 4.25V, protection occurs, MOSFET is off and the system will restart.
Output short circuit protection
When ZCD voltage is lower than the short circuit protection threshold value by 0.5V, and kept for 448
switch periods, short circuit protection occurs, MOSFET is off and the system will restart.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.4
2013.04.07
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