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Teilenummer | AP9962AGH |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
AP9962AGH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
G
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maixmum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
40
±20
32
20
120
27.8
0.22
-55 to 150
-55 to 150
Value
4.5
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200810282
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP9962AGH Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AP9962AGH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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AP9962AGJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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