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Teilenummer | AP9985GM-HF-3 |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
AP9985GM-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low On-Resistance
BV DSS
40V
Fast Switching Performance
RDS(ON)
15mΩ
RoHS-compliant, halogen-free
G
ID 10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9985GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8 (M)
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
40
±20
10
8
48
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP9985GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200811132-3 1/5
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP9985GM-HF-3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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