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Teilenummer | AP4416GJ |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP4416GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4416GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
35V
45mΩ
20A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
35
±20
20
12
50
26
0.21
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
4.8
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200418051-1/4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP4416GJ Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AP4416GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP4416GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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