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Teilenummer | AP2612GY-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP2612GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Simple Drive Requirement
▼ Surface Mount Device
▼ RoHS Compliant
S
D
D
SOT-26
G
D
D
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
G
30V
35mΩ
6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+8
6
4.7
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201103241
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP2612GY-HF Schematic.PDF ] |
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