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Teilenummer | NGD8209N |
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Beschreibung | Ignition IGBT | |
Hersteller | ON Semiconductor | |
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Gesamt 5 Seiten NGD8209N
Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include motorbike ignition, Direct Fuel Injection, or wherever high
voltage and high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Low Saturation Voltage
• High Pulsed Current Capability
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
445 VDC
445 VDC
15 VDC
12 ADC
30 AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 94 Watts
0.63 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
12 AMPS
410 VOLTS
VCE(on) 3 2.0 V @
IC = 6.0 A, VGE . 4.0 V
C
G RG
RGE
E
4
12
3
DPAK
CASE 369C
STYLE 7
MARKING DIAGRAM
1
Gate
2
Collector
YWW
NGD
8209G
4
Collector
3
Emitter
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
NGD8209NT4G
Package
DPAK
(Pb−Free)
Shipping†
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number:
NGD8209N/D
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ NGD8209N Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
NGD8209N | Ignition IGBT | ON Semiconductor |
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