(PDF) SMP20P10 Datasheet - P-Channel Enhancement-Mode Transistor

Número de pieza	SMP20P10
Descripción	P-Channel Enhancement-Mode Transistor
Fabricantes	Siliconix
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No Preview Available ! SMP20P10 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –100 rDS(on) (W) 0.20 TO-220AB ID (A) –20 D G GD S Top View Drain Connected to Tab S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) TC = 25_C TC = 100_C L = 0.05 mH TC = 25_C TC = 100_C VDS VGS ID IDM IAR EAR PD TJ, Tstg TL –100 "20 –20 –12 –80 –20 20 125 50 –55 to 150 300 V A mJ W _C Thermal Resistance Ratings Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient RthJA 80 Maximum Junction-to-Case RthJC 1.0 _C/W Case-to-Sink RthCS 1.0 Notes: a. Duty cycle v1% Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70287. Siliconix P-35259—Rev. B, 16-May-94 1 1 page

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PDF SMP20P10 Data sheet ( Hoja de datos )