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AP02N90P-HF-3 Schematic ( PDF Datasheet ) - Advanced Power Electronics

Teilenummer AP02N90P-HF-3
Beschreibung N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Hersteller Advanced Power Electronics
Logo Advanced Power Electronics Logo 




Gesamt 5 Seiten
AP02N90P-HF-3 Datasheet, Funktion
Advanced Power
Electronics Corp.
AP02N90P-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low On-resistance
D
Fast Switching Speed
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
900V
7.2
1.9A
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
The AP02N90P-HF-3 provides high blocking voltage to overcome
voltage surge and sag in the toughest power systems and is well suited
for DC-DC, AC-DC converters for power applications.
G
DS
The TO-220 through-hole package is widely used in commercial and industrial
applications where a small pcb footprint or an attached heatsink are required.
Absolute Maximum Ratings
D (tab)
TO-220 (P)
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
900
±30
1.9
1.2
6
62.5
0.5
18
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
A
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2
62
Unit
°C/W
°C/W
Ordering Information
AP02N90P-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube)
©2011 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201008113-3 1/5





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