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Teilenummer | AP01N40G-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP01N40G-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ 100% Avalanche Test
▼ Fast Switching Performance
▼ Simple Drive Requirement
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
D
400V
16Ω
0.2A
S
SOT-89
D
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
+20
0.2
0.14
0.8
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
100
Units
℃/W
1
201005191
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP01N40G-HF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AP01N40G-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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