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Número de pieza | AP25N10GJ | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP25N10GJ (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP25N10GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Surface Mount Package
▼ RoHS Compliant
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP25N10GJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
100V
80mΩ
23A
G D S TO-252(H)
G
D
S
Rating
100
±20
23
14.6
80
96
0.77
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
201004062-1/4
1 page 富鼎先進電子股份有限公司
ADVANCED POWER ELECTRONICS CORP.
產 品 尺 寸 圖(無鉛)
Package Outline : TO-252(低壓)
D
D1
E3
E2
E1
B1 F1
ee
F
SYMBOLS
A2
A3
B1
D
D1
E3
F
F1
E1
E2
e
C
Millimeters
MIN NOM MAX
1.80 2.30 2.80
0.40 0.50 0.60
0.40 0.70 1.00
6.00 6.50 7.00
4.80 5.35 5.90
3.50 4.00 4.50
2.20 2.63 3.05
0.5 0.85 1.20
5.10 5.70 6.30
0.50 1.10 1.80
-- 2.30 --
0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
A2 R : 0.127~0.381
A3 (0.1mm
C
Part Marking Information & Packing : TO-252
25N10GH
YWWSSS
LOGO
Part
Package Code
meet Rohs requirement
Date Code (ywwsss)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
文件編號:QWQAD-7701
版 別:12
頁 碼:48
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AP25N10GJ.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP25N10GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP25N10GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP25N10GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP25N10GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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