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Teilenummer | AP0203GMT-HF-3 |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
AP0203GMT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
Low On-resistance
RoHS-compliant, halogen-free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The PMPAK®5x6 package is specially designed for DC-DC converter
applications, with a foot print that is compatible with the popular SO-8
and offers a backside heat sink and lower package profile.
BV DSS
R DS(ON)
ID
30V
2.2mΩ
90A
D
D
D
D
S
S
S
G
PMPAK®5x6
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TA=25°C
ID at TA=70°C
IDM
PD at TC=25°C
PD at TA=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
30
±20
155
38
30
300
83.3
5
28.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
°C
°C
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
1.5
25
Units
°C/W
°C/W
Ordering Information
AP0203GMT-HF-3TR
RoHS-compliant halogen-free PMPAK®5x6, shipped on tape
and reel (3000pcs/reel)
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
PMPAK® is a registered trademark of Advanced Power Electronics Corp.
200910191-3 1/5
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP0203GMT-HF-3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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