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Teilenummer | AP0203GMT-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP0203GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
BVDSS
RDS(ON)
ID
30V
2.2mΩ
155A
D
D
D
D
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
155
38
30
300
83.3
5
28.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Value
1.5
25
Units
V
V
A
A
A
A
W
W
mJ
℃
℃
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200910191
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP0203GMT-HF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AP0203GMT-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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