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PDF SSM5H14F Data sheet ( Hoja de datos )
| Número de pieza | SSM5H14F | |
| Descripción | Silicon Epitaxial Schottky Barrier Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM5H14F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SSM5H14F
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H14F
○ Fuse cut applications of the battery pack
• 1.8-V drive
• An N-ch MOSFET and a Schottky Barrier Diode in one package.
• Low RDS (ON) and Low VF
Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
Schottky Diode (Ta = 25°C)
VDSS
VGSS
ID
IDP
PD (Note 1)
Tch
Characteristics
Symbol
Maximum (peak) reverse Voltage
VRM
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10ms)
Junction temperature
VR
IO
IFM
IFSM
Tj
MOSFET and Diode (Ta = 25°C)
30
±12
3.0
6.0
0.75
150
Rating
45
40
100
300
1
125
V
V
A
W
°C
Unit
V
V
mA
mA
A
°C
SMV
1. Gate
2. Source
3. Anode
4. Cathode
5. Drain
JEDEC
⎯
JEITA
SC-74A
TOSHIBA
2-3L1F
Weight : 14 mg (typ.)
Characteristics
Storage temperature range
Operating temperature range
Symbol
Tstg
Topr
Rating
−55 to 125
−40 to 100
Unit
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking
5
4
Equivalent Circuit (top view)
54
KEZ
123
123
1
2009-05-15
1 page  
MOS FET
.
10
|Yfs| – ID
Common Source
VDS = 3 V
Ta = 25°C
3
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
1000
500
300
C – VDS
Ciss
100
50
30 Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
0.1
1
Coss
Crss
10 100
Drain–source voltage VDS (V)
Dynamic Input Characteristic
10
Common Source
ID = 3 A
8 Ta = 25°C
6
VDD=15V
VDD=24V
4
2
0
0 4 8 12
Total Gate Charge Qg (nC)
SSM5H14F
IDR – VDS
10
Common Source
VGS = 0 V
D
1G
IDR
S
0.1
Ta =100 °C
0.01
25 °C
0.001
0
−25 °C
–0.2
–0.4
–0.6
–0.8
Drain–source voltage VDS (V)
–1.0
1000
toff
100
tf
t – ID
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7Ω
10
ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
5 2009-05-15
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM5H14F.PDF ] | |
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