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PDF SSM5H05TU Data sheet ( Hoja de datos )
| Número de pieza | SSM5H05TU | |
| Descripción | Silicon Epitaxial Schottky Barrier Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM5H05TU (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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SSM5H05TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H05TU
DC-DC Converter
• Combined Nch MOSFET and Schottky Diode in one package.
• Low RDS (ON) and low VF
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Symbol
VDS
VGSS
ID
IDP (Note 2)
PD (Note 1)
t = 10s
Tch
Rating
20
±12
1.5
6.0
0.5
0.8
150
Unit
V
V
A
W
°C
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Symbol
VRM
VR
IO
IFSM
Tj
Rating
15
12
0.5
2 (50 Hz)
125
Unit
V
V
A
A
°C
UFV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Operating temperature
Tstg
Topr
(Note 3)
−55~125
−40~85
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width is limited by max channel temperature.
Note 3: The operating temperature is limited by max channel temperature and max junction temperature.
1 2007-11-01
1 page  
MOSFET Electrical Characteristics
SSM5H05TU
3.0
4.0V
2.5
2.0
ID - VDS (MOSFET)
2.5V
Common Source
Ta=25℃
2.0V
1.5
VGS = 1 .8 V
1.0
0.5
0.0
0.0
0.5 1.0 1.5
Drain-Source voltage VDS (V)
2.0
10000
1000
ID - VGS (MOSFET)
Common Source
VDS=3V
100
Ta=85℃
10
25℃
1 -25℃
0.1
0.01
0
1 23
Gate-Source voltage VGS (V)
4
500
400
300
200
100
0
0
RDS(ON) - ID (MOSFET)
Common Source
Ta=25℃
2.5V
VGS = 4 .0 V
0.5 1 1.5
Drain current ID (A)
2
2.5
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-25
Vth - Ta (MOSFET)
Common Source
ID=0.1mA
VDS=3V
0 25 50 75
Ambient temperture Ta (℃)
100
RDS(ON) - Ta (MOSFET)
0.5
Common Source
ID=0.75A
0.4
0.3
0.2 2.5V
0.1 4.0V
0
-25
0 25 50 75
Ambient temperture Ta (℃)
100
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-25
Vth - Ta (MOSFET)
Common Source
ID=0.1mA
VDS=3V
0 25 50 75
Ambient temperture Ta (℃)
100
5 2007-11-01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SSM5H05TU.PDF ] | |
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