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PDF SSM3K329R Data sheet ( Hoja de datos )
| Número de pieza | SSM3K329R | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSM3K329R (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SSM3K329R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K329R
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
• 1.8-V drive
• Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
: RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
: RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS ±12 V
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
ID (Note 1)
IDP (Note 1)
PD (Note 2)
t = 10s
Tch
Tstg
3.5
7.0
1
2
150
−55 to 150
A
W
°C
°C
SOT-23F
JEDEC
JEITA
1: Gate
2: Source
3: Drain
―
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3Z1A
Weight: 11 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
Start of commercial production
2010-02
1 2014-03-01
1 page  
10
Common Source
VDS = 3 V
Ta = 25°C
1 Pulse test
|Yfs| – ID
0.1
0.01
0.001
0.001
0.01
0.1
1
Drain current ID (A)
10
1000
500
300
100
50
30
C – VDS
Ciss
Coss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1 1
Crss
10 100
Drain–source voltage VDS (V)
SSM3K329R
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
Pulse test
D
G
–0.5
−25 °C
–1.0
S
Drain–source voltage VDS (V)
IDR
–1.5
1000
toff
100 tf
t – ID
Common Source
VDD = 15 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
Dynamic Input Characteristic
10
Common Source
ID = 2.0 A
8 Ta = 25°C
6
VDD = 15 V
VDD = 24 V
4
2
0
0
1
2
3
4
Total Gate Charge Qg (nC)
5
2014-03-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM3K329R.PDF ] | |
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