SSM3K128TU Datasheet PDF - Toshiba Semiconductor
| Part Number | SSM3K128TU | |
| Description | Field Effect Transistor | |
| Manufacturers | Toshiba Semiconductor | |
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SSM3K128TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K128TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 4.0V drive
• Low ON-resistance : Ron = 360mΩ (max) (@VGS = 4.0V)
: Ron = 217mΩ (max) (@VGS = 10V)
2.1±0.1
1.7±0.1
UNIT: mm
1
Absolute Maximum Ratings (Ta = 25˚C)
23
Characteristic
Symbol
Rating
Drain-source voltage
VDSS
30
Gate-source voltage
VGSS
±20
Drain current
DC
Pulse
ID
IDP
1.5
3.0
Drain power dissipation
PD (Note1)
500
Channel temperature
Tch 150
Storage temperature
Tstg −55~150
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Unit
V
V
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
UFM
1. Gate
2. Source
3. Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2:Pulse test
Symbol
Test Condition
Min
V (BR) DSS
IDSS
IGSS
Vth
⏐Yfs⏐
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
ID = 1 mA, VGS = 0 V
VDS = 30 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
VDS = 5 V, ID = 1 mA
VDS = 5 V, ID = 0.6 A
ID = 0.6 A, VGS = 10 V
ID = 0.6 A, VGS = 4.0 V
(Note2)
(Note2)
(Note2)
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, ID = 1.5 A
VGS = 10 V
VDD = 15 V, ID = 0.6 A,
VGS = 0~4.0 V, RG = 10 Ω
ID = -1.5 A, VGS = 0 V
(Note2)
30
⎯
⎯
1.1
0.73
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
1.45
160
260
57
33
12
2.8
1.6
1.2
12.0
6.9
-0.85
Max
⎯
1
±1
2.6
⎯
217
360
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
Downloaded from Elcodis.com electronic components distributor
1
2007-06-06
|
| |
 
rth – tw
600
c
b
100
a
10
Single pulse
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
c: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 0.36 mm2×3)
1
0.001 0.01
0.1
1
10 100 600
Pulse width tw (s)
SSM3K128TU
1000
800
PD – Ta
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm ×
1.6t , Cu Pad : 645 mm2)
a
600
b
400
200
0
-50 0 50 100
Ambient temperature Ta (°C)
150
Downloaded from Elcodis.com electronic components distributor
5
2007-06-06
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SSM3K128TU electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SSM3K128TU.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| SSM3K128TU | The function is Field Effect Transistor. Toshiba Semiconductor | |
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