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PDF SSM3K127TU Data sheet ( Hoja de datos )
| Número de pieza | SSM3K127TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM3K127TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K127TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8V drive
• Low ON-resistance: Ron = 286mΩ (max) (@VGS = 1.8V)
: Ron = 167mΩ (max) (@VGS = 2.5V)
: Ron = 123mΩ (max) (@VGS = 4.0V)
2.1±0.1
1.7±0.1
Unit: mm
1
23
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS 30 V
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
VGSS
ID
IDP
PD (Note 1)
PD (Note 2)
Tch
±12
2.0
4.0
800
500
150
V
A
mW
°C
UFM
JEDEC
1. Gate
2. Souce
3. Drain
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2U1A
temperature/current/voltage and the significant change in
Weight: 6.6mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
1
http://store.iiic.cc/
2007-11-13
1 page  
10
Common Source
VDS = 3 V
Ta = 25°C
3
|Yfs| – ID
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
1000
500
300
100
50
30
C – VDS
Ciss
Coss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
Crss
10 100
Drain–source voltage VDS (V)
SSM3K127TU
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G IDR
−25 °C
–0.5
–1.0
S
–1.5
Drain–source voltage VDS (V)
1000
toff
100 tf
t – ID
Common Source
VDD = 15 V
VGS = 0 ∼ 2.5 V
Ta = 25 °C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
Dynamic Input Characteristic
10
Common Source
ID = 2.0 A
8 Ta = 25°C
6
VDD = 15 V
VDD = 24 V
4
2
0
0
1
2
3
4
Total Gate Charge Qg (nC)
5
http://store.iiic.cc/
2007-11-13
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM3K127TU.PDF ] | |
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