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Teilenummer | AP9566GM |
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Beschreibung | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP9566GM
RoHS-compliat Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-40V
72mΩ
-4.5A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
-40
+20
-4.5
-3.6
-20
2.5
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200806201
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP9566GM Schematic.PDF ] |
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