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PDF SSD70N04-06D Data sheet ( Hoja de datos )

Número de pieza SSD70N04-06D
Descripción N-Ch Enhancement Mode Power MOSFET
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Elektronische Bauelemente
SSD70N04-06D
75A, 40V, RDS(ON) 6 mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high
cell density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature TO-252 surface mount package saves
board space.
High power and current handling capability.
Low side high current DC-DC converter applications.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
LeaderSize
13’ inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

Drain

Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
VDS
VGS
ID @TC=25
IDM
IS
PD @TC=25
40
±20
75
40
30
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
50
3.0

Source
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev.A
Any changes of specification will not be informed individually.
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