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Teilenummer | SSD1030P |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | South Sea Semiconductor | |
Logo | ||
Gesamt 5 Seiten SSD1030P
P-Channel Enhancement Mode MOSFET
VDS (V)
-30V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
65 @VGS = - 10V
-15A
115 @VGS = - 5V
130 @VGS = - 4.5V
TO-252
D
G
S
D
FEATURES
Super high density cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
Pb free.
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Drain Current-Continuous @ TJ = 125oC
-Pulsed b
VGS +- 25
ID -15
IDM -30
Drain-Source Diode Forward Current a
IS -1.7
Maximum Power Dissipationa
PD 50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
R JC
R JA
3
50
Unit
V
V
A
A
A
W
oC
o
C/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, January 2008 (Rev 2.1)
1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ SSD1030P Schematic.PDF ] |
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