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PDF SSD40P04-20DE Data sheet ( Hoja de datos )

Número de pieza SSD40P04-20DE
Descripción P-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSD40P04-20DE
-36A , -40V , RDS(ON) 30m
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
TO-252 saves board space.
Fast Switch Speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.80 J 2.30 REF.
B 5.20 5.50 K 0.64 0.90
C 2.15 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.65
E 6.8 7.5 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.25
H 0.64 1.20
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS -40
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current @TA=25°C 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation @TA=25°C 1
VGS
ID
IDM
IS
PD
±20
-36
-40
-30
50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 175
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
50
Maximum Thermal Resistance Junction-Case
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJC
3
3
Source
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
2-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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