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Número de pieza | SSD40P04-20D | |
Descripción | P-Ch Enhancement Mode Power MOSFET | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSD40P04-20D (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Elektronische Bauelemente
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
PRODUCT SUMMARY
VDS(V)
-40
PRODUCT SUMMARY
RDS(on) m(
30@VGS= -10V
40@VGS= -4.5V
ID(A)
-36
-29
Gate
Drain
Source
A
B
GE
K HF
MJ
C
D
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
VGS
ID @TA=25℃
IDM
IS
PD @TA=25℃
±20
36
±40
-30
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 5
1 page Elektronische Bauelemente
CHARACTERISTIC CURVE
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SSD40P04-20D.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSD40P04-20D | P-Ch Enhancement Mode Power MOSFET | SeCoS |
SSD40P04-20DE | P-Ch Enhancement Mode Power MOSFET | SeCoS |
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