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PDF SSD40N10-30D Data sheet ( Hoja de datos )
| Número de pieza | SSD40N10-30D | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSD40N10-30D
26A, 100V, RDS(ON) 36mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
FEATURES
Low RDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
APPLICATION
PoE Power Sourcing Equipment.
PoE Powered Devices.
Telecom DC/DC converters.
White LED boost converters.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25℃1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation @TC=25℃1
VDS 100
VGS ±20
ID 26
IDM 50
IS 50
PD 50
V
V
A
A
A
W
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient 1
RθJA
-55 ~ 175
50
°C
°C / W
Maximum Thermal Resistance Junction-Case
Notes：
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJC
3.0
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-May-2011 Rev.A
Page 1 of 4
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