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SSD408 Schematic ( PDF Datasheet ) - SeCoS

Teilenummer SSD408
Beschreibung N-Channel Enhancement Mode Power Mos.FET
Hersteller SeCoS
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Gesamt 4 Seiten
SSD408 Datasheet, Funktion
Elektronische Bauelemente
SSD408
18A, 30V,RDS(ON)18m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSD408 uses advanced trench technology to provide
excellent on-resistance and low gate charge.
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications and suited for use as a load switch or in
PWM applications.
TO-252
Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic
D
G
S
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.20 2.80
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Ratings
30
±20
18
14
70
60
0.4
60
35
-55 ~ +175
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.5
50
Unit
/W
/W
Any changing of specification will not be informed individual
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