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PDF SSD60N04-12D Data sheet ( Hoja de datos )
| Número de pieza | SSD60N04-12D | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSD60N04-12D
N-Ch Enhancement Mode Power MOSFET
53A, 40V, RDS(ON) 12mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
And battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
VDS(V)
40
PRODUCT SUMMARY
RDS(on) m(
12@VGS= 10V
14@VGS= 4.5V
ID(A)
53
49
Gate
Drain
Source
A
B
GE
K HF
MJ
C
D
N
O
P
Millimeter
Millimeter
REF. Min. Max. REF. Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
VGS
ID @TA=25℃
IDM
IS
PD @TA=25℃
±20
53
40
30
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
10-Jun-2010 Rev.A
Any changes of specification will not be informed individually.
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