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PDF SSD5030N Data sheet ( Hoja de datos )
| Número de pieza | SSD5030N | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
| Logotipo |  |
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SSD5030N
N-Channel Enhancement Mode MOSFET
VDS (V)
30V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
9.5 @VGS = 10V
50A
19.5 @VGS = 4.5V
FEATURES
Super high density cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
Pb free.
TO-252
D
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
Drain Current-Continuous @ TC = 25oC
-Pulsed b
VGS +- 20
ID 50
IDM 110
Drain-Source Diode Forward Current a
Maximum Power Dissipationa@TC = 25oC
IS 20
PD 50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
R JC
R JA
3
50
Unit
V
V
A
A
A
W
oC
oC/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, April 2008 (Rev 2.1)
1
1 page  
SSD5030N
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
td(on)
VOUT
ton
tr
td(off)
90%
10% INVERTED
toff
90%
tf
10%
VIN 10%
90%
50% 50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
0.01
10 -5
10-4
10-3
10-2
PDM
t1
t2
1. R JA(t) = r(t)*R JA
2. R JA = see datasheet
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
10-1 1
10
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, April 2008 (Rev 2.1)
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSD5030N.PDF ] | |
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