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PDF SSD2030N Data sheet ( Hoja de datos )
| Número de pieza | SSD2030N | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
| Logotipo |  |
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SSD2030N
N-Channel Enhancement Mode MOSFET
VDS (V)
30V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
30 @VGS = 10V
20A
55 @VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
TO-252
D
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25oC
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipationa@TC = 25oC
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
30
+- 20
20
60
20
50
-55 to 175
V
V
A
A
A
W
oC
R JC
R JA
3
oC/W
50
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, November 2005 (Rev 2.0)
1
1 page  
SSD2030N
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
td(on)
VOUT
ton
tr
td(off)
90%
10% INVERTED
toff
90%
tf
10%
VIN 10%
90%
50% 50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.0.5
0.02
0.01
0.01
10 -5
Single Pulse
10-4
10-3
10-2
PDM
t1
t2
1. R JA(t) = r(t)*R JA
2. R JA = see datasheet
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
10-1 1
10
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, November 2005 (Rev 2.0)
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSD2030N.PDF ] | |
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