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Teilenummer | 4946 |
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Beschreibung | Dual N-Channel High Density Trench MOSFET | |
Hersteller | TuoFeng | |
Logo | ||
Gesamt 4 Seiten Shenzhen TuoFeng Semiconductor Technology co., LTD
4946
Dual N-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS
ID RDS(on) (mΩ) Max
5.0A
52 @ VGS = 10V
P
60V
4.0A
75 @ VGS = 4.5V
P
FEATURES
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
SOP-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
D1
G1
S1
D2
G2
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C
-Pulse b
Drain-Source Diode Forward Current a
Maximum Power Dissipationa TA=25ºC
TA=75ºC
Avalanche Energy with Single Pulse
L=0.1mH
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
EAS
TJ,TSTG
Limit
60
± 20
5.0
26
3.1
2.0
1.2
11
- 55 to 150
Unit
V
V
A
A
A
W
mJ
°C
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambienta
:Note
a. Surface Mounted on FR4 Board , t ≤ 10sec .
b. Pulse width limited by maximum junction temperature.
RthJA
1
62.5 °C/W
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ 4946 Schematic.PDF ] |
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