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AO4948 Schematic ( PDF Datasheet ) - Alpha & Omega Semiconductors

Teilenummer AO4948
Beschreibung 30V Dual N-Channel MOSFET
Hersteller Alpha & Omega Semiconductors
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Gesamt 8 Seiten
AO4948 Datasheet, Funktion
AO4948
30V Dual N-Channel MOSFET
SRFET TM
General Description
Product Summary
The AO4948 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
FET1(N-Channel)
VDS= 30V
ID= 8.8A (VGS=10V)
RDS(ON)
< 16m(VGS=10V)
< 22m(VGS=4.5V)
100% UIS Tested
100% Rg Tested
FET2(N-Channel)
30V
8A (VGS=10V)
RDS(ON)
< 19m(VGS=10V)
< 28m(VGS=4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D1
Pin1
S1 D1
G1 D1
S2 D2
G2 D2
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Max FET2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.3mH C
ID
IDM
IAS, IAR
EAS, EAR
8.8
7.1
60
21
66
8
6.5
40
13
25
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
D2
S2
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Rev 3: Dec 2010
www.aosmd.com
Page 1 of 8






AO4948 Datasheet, Funktion
AO4948
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
4V
5V
15
3.5V
3V
30
VDS=5V
25
20
15
10
10
125°C
5
VGS=2.5V
5
25°C
00
012345
1 1.5 2 2.5 3 3.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
30
25
VGS=4.5V
20
15
VGS=10V
10
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.6
VGS=10V
1.4 ID=8A
17
1.2 5
1
VGS=4.5V
ID=4A
2
10
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistan(cNeotves.EJ) unction18Temperature
40
ID=8A
35
30
25 125°C
20
15 25°C
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 3: Dec 2010
www.aosmd.com
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