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PDF SSM4431 Data sheet ( Hoja de datos )
| Número de pieza | SSM4431 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
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SSM4431
P-Channel Enhancement Mode MOSFET
VDS (V)
- 30V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
45 @VGS = - 10V
- 6.0A
70 @VGS = - 5V
80 @VGS = - 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount package.
8
7
6
5
SO-8
1
2
3
4
D (5, 6, 7, 8)
G (4)
S(1, 2, 3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
Drain Current-Continuous @ TJ = 125oC
-Pulsed b
VGS +- 25
ID - 6.0
IDM - 30
Drain-Source Diode Forward Current a
IS - 1.7
Maximum Power Dissipation a
PD 2.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
R JA
50
Unit
V
V
A
A
A
W
oC
oC/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, October 2007 (Rev 3.0)
1 of 7
1 page  
SSM4431
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
td(on)
VOUT
ton
tr
td(off)
90%
10%
toff
90%
tf
10%
VIN 10%
50% 50%
INVERTED
PULSE WIDTH
90%
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
1
Duty Cycle = 0.5
0.1 0.1
0.2
0.0.5
0.02
0.01
10-4
10-3
Single Pulse
10-2
10-1
PDM
t1
t2
1. R JA(t) = r(t)*R JA
2. R JA = see datasheet
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
1 10 10 2
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, October 2007 (Rev 3.0)
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM4431.PDF ] | |
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