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FDN304PZ Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDN304PZ
Beschreibung P-Channel 1.8V Specified PowerTrench MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 5 Seiten
FDN304PZ Datasheet, Funktion
March 2003
FDN304PZ
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–2.4 A, –20 V.
RDS(ON) = 52 m@ VGS = –4.5 V
RDS(ON) = 70 m@ VGS = –2.5 V
RDS(ON) = 100 m@ VGS = –1.8 V
Fast switching speed
ESD protection diode
High performance trench technology for extremely
low RDS(ON)
SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
DD
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
04Z
FDN304PZ
7’’
©2003 Fairchild Semiconductor Corporation
GS
Ratings
–20
±8
–2.4
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN304PZ Rev C (W)





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