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PDF APTGT150A120TG Data sheet ( Hoja de datos )
| Número de pieza | APTGT150A120TG | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTGT150A120TG
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
VBUS
NT C2
Q1
G1
E1
Q2
G2
E2
O UT
0/VBU S
NT C1
VBUS
E1
G1
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
220
150
350
±20
690
300A @ 1150V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT150A120TG
Operating Frequency vs Collector Current
60
50
ZV S
40
VCE=600V
D=50%
RG=2.2 Ω
TJ =125°C
TC=75°C
30 ZCS
20
10 Hard
Switc hing
0
10 40 70
100 130 160 190 220
IC (A)
Forward Characteristic of diode
300
250
200
150 TJ=125°C
100
50 TJ=125°C
TJ= 25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.9
0.3
Diode
0.25 0.7
0.2 0.5
0.15 0.3
0.1
0.05
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT150A120TG.PDF ] | |
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