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PDF SSG55N60M Data sheet ( Hoja de datos )
| Número de pieza | SSG55N60M | |
| Descripción | ultrafast IGBT | |
| Fabricantes | SSDI | |
| Logotipo |  |
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
TO-254 and TO-254Z
TO-258 and TO-259
SSG55N60 series
55 AMP /600 Volts
1.65 V saturation
ultrafast IGBT
Features:
• Lowest ON-resistance in the industry
• Hermetically Sealed, Isolated Package
• Low Total Gate Charge
• Fast Switching
• TX, TXV, S-Level screening available
Maximum Ratings
Collector – Emitter Breakdown Voltage
Gate – Emitter Voltage
Max. Continuous Collector Current
Max. Instantaneous Drain Current (Tj limited)
Clamped Inductive Load current
Repetitive Reverse Voltage Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance (Junction to Case)
TO-254 (M)
TO-254Z (Z)
@ TC = 25ºC
@ TC = 100ºC
@ TC = 25ºC
L= 10 uH
Limited by Tj max
@ TC = 25ºC
Symbol
VCES
VGE
ID1
ID2
ID3
ILM
EARV
PD
TOP & TSTG
R0JC
Value
600
±20
55
27
200
200
20
195
-55 to +150
0.64 (typ 0.35)
TO-258 (N)
TO-259 (P)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0005A
DOC
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SSG55N60M.PDF ] | |
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