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Teilenummer | AO3410 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Alpha & Omega Semiconductors | |
Logo | ||
Gesamt 2 Seiten August 2002
AO3410
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3410 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V and as
high as 12V. This device is suitable for use as a load
switch or in PWM applications.
Features
VDS (V) = 30V
ID = 5.8 A
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 33mΩ (VGS = 4.5V)
RDS(ON) < 52mΩ (VGS = 2.5V)
RDS(ON) < 70mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
5.8
4.9
30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ AO3410 Schematic.PDF ] |
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