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PDF SSM6J503NU Data sheet ( Hoja de datos )
| Número de pieza | SSM6J503NU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6J503NU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J503NU
Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS −20 V
Gate-Source voltage
VGSS ±8 V
Drain current
Power Dissipation
DC
Pulse
ID
IDP (Note 1)
PD (Note 2)
t ≦10s
−6.0
-24.0
1
2
A
W
Channel temperature
Storage temperature
Tch 150 °C
Tstg
−55 to 150
°C
1,2,5,6: Drain
3: Gate
Note: Using continuously under heavy loads (e.g. the application of
UDFN6B
4: Source
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2AA1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 8.5 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View)
Equivalent Circuit(Top View) Pin Condition(Top View)
65 4
SP3
65 4
654
Drain
Source
1 23
Polarity marking
1 23
1 23
Polarity marking (on the top)
*Electrodes : on the bottom
Start of commercial production
2010-11
1 2014-03-01
1 page  
1000
Rth – tw
b
100
a
10
1
0.001
Single pulse
a. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.27 mm2)
0.01
0.1
1
10
100 1000
Pulse width tw (s)
SSM6J503NU
PD – Ta
1400 a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.27mm2 )
1000
a
800
600
b
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2014-03-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6J503NU.PDF ] | |
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