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NVD5802N Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NVD5802N
Beschreibung Power MOSFET ( Transistor )
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
NVD5802N Datasheet, Funktion
NTD5802N, NVD5802N
Power MOSFET
40 V, Single NChannel, 101 A DPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
MSL 1/260°C
AEC Q101 Qualified
100% Avalanche Tested
AEC Q101 Qualified NVD5802N
These Devices are PbFree and are RoHS Compliant
Applications
CPU Power Delivery
DCDC Converters
Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent (RqJC) (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
(RqJC) (Note 1)
Continuous Drain Cur-
rent (RqJA) (Note 1)
Steady
State
TC = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxPkg
TJ, Tstg
40
"20
101
78
93.75
16.4
12.7
2.5
300
45
55 to
175
V
V
A
W
A
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
50 A
6.0 V/ns
Single Pulse DraintoSource Avalanche En-
ergy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
EAS
240 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
40 V
RDS(on)
4.4 mW @ 10 V
7.8 mW @ 5.0 V
D
ID
101 A
50 A
NChannel
G
S
4
12
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5802N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 6
1
Publication Order Number:
NTD5802N/D






NVD5802N Datasheet, Funktion
NTD5802N, NVD5802N
TYPICAL PERFORMANCE CHARACTERISTICS
10
1 D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 12. Thermal Response
0.1
1
ORDERING INFORMATION
Order Number
Package
Shipping
NTD5802NT4G
DPAK
(PbFree)
2500 / Tape & Reel
NVD5802NT4G
DPAK
(PbFree)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6

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