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TK100A06N1 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer TK100A06N1
Beschreibung MOSFETs
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 9 Seiten
TK100A06N1 Datasheet, Funktion
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 2.2 m(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TK100A06N1
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 60 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
263 A
Drain current (DC)
(Tc = 25)
(Note 1)
ID
100
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
584
Power dissipation
(Tc = 25)
PD 45 W
Single-pulse avalanche energy
(Note 3)
EAS
413 mJ
Avalanche current
IAR 100 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2012-04
1 2014-01-07
Rev.4.0






TK100A06N1 Datasheet, Funktion
TK100A06N1
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
6
2014-01-07
Rev.4.0

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