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Teilenummer | TK10E60W |
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Beschreibung | MOSFETs | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 10 Seiten MOSFETs Silicon N-Channel MOS (DTMOS)
TK10E60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK10E60W
1: Gate
2: Drain (Heatsink)
3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
600
±30
9.7
38.8
100
121
2.5
9.7
38.8
150
-55 to 150
0.6
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2012-09
1 2013-12-25
Rev.3.0
TK10E60W
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 EOSS - VDS
Fig. 8.11 Vth - Ta
Fig. 8.12 Dynamic Input/Output Characteristics
6 2013-12-25
Rev.3.0
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ TK10E60W Schematic.PDF ] |
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