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Teilenummer | TJ60S04M3L |
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Beschreibung | MOSFETs | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 9 Seiten MOSFETs Silicon P-Channel MOS (U-MOS)
TJ60S04M3L
1. Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ60S04M3L
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
Start of commercial production
2011-03
1 2014-08-04
Rev.4.0
TJ60S04M3L
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta
Fig. 8.10 Dynamic Input/Output Characteristics
Fig. 8.11 PD - Tc
(Guaranteed Maximum)
6
2014-08-04
Rev.4.0
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ TJ60S04M3L Schematic.PDF ] |
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