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Teilenummer | K2930 |
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Beschreibung | MOSFET ( Transistor ) - 2SK2930 | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 10 Seiten 2SK2930
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.020 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-553C (Z)
4th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source
2SK2930
1000
500
Body–Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
50
Ciss
Coss
Crss
20 VGS = 0
f = 1 MHz
10
0 10 20
30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
I D = 35 A
V DD = 50 V
80 25 V
10 V
20
16
60 VDS
40
VGS
12
8
20 V DD = 50 V
25 V
4
10 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
300
100
30
Switching Characteristics
t d(off)
tf
tr
10 t d(on)
3 VGS = 10 V, V DD = 3 0 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I D (A)
6
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ K2930 Schematic.PDF ] |
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