(PDF) K2930 Datasheet - MOSFET ( Transistor )

Número de pieza	K2930
Descripción	MOSFET ( Transistor ) - 2SK2930
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2930 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB ADE-208-553C (Z) 4th. Edition Jun 1998 D G S 1 2 3 1. Gate 2. Drain(Flange 3. Source 1 page 2SK2930 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test 0.8 0.6 I D = 20A 0.4 10 A 0.2 5A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 0.1 0.3 1 3 10 30 100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 0.04 V GS = 4 V 20 A 5,10 A 0.02 0 –40 5, 10,20 A 10 V 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 20 Tc = –25 °C 25 °C 10 75 °C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

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PDF K2930 Data sheet ( Hoja de datos )