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Teilenummer | K1933 |
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Beschreibung | MOSFET ( Transistor ) - 2SK1933 | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 10 Seiten 2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
2SK1933
5000
Body to Drain Diode Reverse
Recovery Time
2000
1000
500
200
di/dt = 100 A/ µs, VGS = 0
100 Ta = 25°C
50
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I DR (A)
10000
1000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Coss
100
Crss
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1000
800
600
Dynamic Input Characteristics
VDD = 250 V
400 V
600 V
VGS
VDS
20
16
12
ID = 8 A
400 8
200 VDD = 250 V
400 V
4
600 V
0
0 40 80 120 160 200
Gate Charge Qg (nc)
Switching Characteristics
500
td(off)
200 tf
100 tr
50
td(on)
20
10 VGS = 10 V, VDD =: 30 V
PW = 5 µs, duty <= 1%
5
0.2 0.5 1 2
5 10
Drain Current I D (A)
20
6
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ K1933 Schematic.PDF ] |
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