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Teilenummer | TPC8049-H |
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Beschreibung | MOSFETs | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 7 Seiten TPC8049-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8049-H
Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 13 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 6.9 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 48 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
13
52
1.9
1.0
61
13
0.06
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-06-18
TPC8049-H
1000
rth – tw
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
100
10
1
0.1
0.001
0.01
0.1 1 10
Pulse width tw (s)
(2)
(1)
Single - pulse
100 1000
Safe operating area
1000
100 ID max (Pulse) *
10
t = 1ms *
10ms *
1
0.1 * Single – pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
6 2009-06-18
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ TPC8049-H Schematic.PDF ] |
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