IXGQ90N33TCD1 Datasheet PDF - IXYS Corporation
| Part Number | IXGQ90N33TCD1 | |
| Description | IGBTs | |
| Manufacturers | IXYS Corporation | |
| Logo |  |
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There is a preview and IXGQ90N33TCD1 download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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Trench Gate,
High Speed,
IGBTs
For PDP Applications
IXGA90N33TC
IXGQ90N33TC
IXGQ90N33TCD1
IVCCPES
VCE(sat)
=
=
≤
330V
360A
1.80V
90N33TC 90N33TCD1
Symbol
VCES
VGES
VGEM
IC25
IC(RMS)
IICC1P10
ICP
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TLeC=ad25C°uCrr(eCnht iLpimCiat pability)
TTCC
= 110°C
< 150°C, tp < 10μs
TC < 150°C, tp < 10μs, Duty cycle < 1%
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P)
TO-263
TO-3P
Maximum Ratings
330
±20
±30
90
75
38
60
360
V
V
V
A
A
A
A
A
200
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
VGE = 15V, IC = 20A, Note 1
IC = 45A
TJ = 125°C
IC = 90A
TJ = 125°C
Characteristic Values
Min. Typ. Max.
330 V
3.0 5.0 V
1 μA
200 μA
±200 nA
1.54
1.54
1.82
1.95
1.40 V
1.80 V
V
V
V
TO-263 AA (IXGA)
G
E
C (Tab)
TO-3P (IXGQ)
G
C
E
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
• Low VCE(sat)
- for minimum On-State Conduction
Losses
• Fast Switching
Applications
• PDP Screen Drivers
© 2011 IXYS CORPORATION, All Rights Reserved
DS99754B (07/11)
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Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
34
33 RG = 5Ω
VGE = 15V
32 VCE = 240V
31
30
I C = 90A
29
28
27
I C = 45A
26
25
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-on Switching Times
vs. Gate Resistance
75 24
70 t r
td(on) - - - -
65 TJ = 125ºC, VGE = 15V
60 VCE = 240V
23
22
21
55 20
50 19
45
I C = 90A, 45A
40
18
17
35 16
30 15
25 14
20 13
15 12
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 18. Resistive Turn-off Switching Times
vs. Collector Current
120
110 t f td(off) - - - -
100
TJ = 125ºC
RG = 5Ω, VGE = 15V
VCE = 240V
90
60
57
54
51
80 48
70 45
60 42
50
40 TJ = 25ºC
39
36
30 33
20 30
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
IC - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
IXGQ90N33TCD1 IXGA90N33TC
IXGQ90N33TC
Fig. 14. Resistive Turn-on Rise Time
vs. Collector Current
35
34 RG = 5Ω
33 VGE = 15V
32 VCE = 240V
31
TJ = 25ºC
30
29
28
27
26 TJ = 125ºC
25
24
23
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
IC - Amperes
Fig. 17. Resistive Turn-off Switching Times
vs. Junction Temperature
95
90 t f td(off) - - - -
RG = 5Ω, VGE = 15V
85
VCE = 240V
80
60
57
54
51
75
I C = 90A, 45A
70
48
45
65 42
60 39
55 36
50 33
45 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 19. Resistive Turn-off Switching Times
vs. Gate Resistance
120
130
115 t f
td(off) - - - -
TJ = 125ºC, VGE = 15V
120
110
VCE = 240V
110
105
100
I C = 45A
100
90
95 80
90 I C = 90A
85
70
60
80 50
75 40
70 30
4 6 8 10 12 14 16 18 20
RG - Ohms
IXYS REF: G_90N33TC (4G) 5-30-07-C
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