|
|
PDF TPCP8405 Data sheet ( Hoja de datos )
| Número de pieza | TPCP8405 | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPCP8405 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPCP8405
1. Applications
• Cell Phones
• Motor Drivers
2. Features
(1) Low drain-source on-resistance
P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V),
N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current
P-channel IDSS = -10 µA (VDS = -30 V),
N-channel IDSS = 10 µA (VDS = 30 V)
(3) Enhancement mode
P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA),
N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPCP8405
PS-8
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
1 2011-03-14
Rev.2.0
1 page  
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
P/N
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDS = 10 V, VGS = 0 V,
f = 1 MHz
See Figure 6.2.1.
See Figure 6.2.2.
See Figure 6.2.1.
See Figure 6.2.2.
See Figure 6.2.1.
See Figure 6.2.2.
See Figure 6.2.1.
See Figure 6.2.2.
Min
TPCP8405
Typ.
1075
Max
Unit
pF
830
190
pF
53
234
pF
177
7.3
4.1
13.6
10.8
42
11
136
31
ns
ns
ns
ns
Fig. 6.2.1 Switching Time Test Circuit (P-ch) Fig. 6.2.2 Switching Time Test Circuit (N-ch)
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
P/N
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
Symbol
Test Condition
Qg
Qgs1
Qgd
VDD ≈ -24 V, VGS = -10 V,
ID = -6 A
VDD ≈ 24 V, VGS = 10 V,
ID = 6.5 A
VDD ≈ -24 V, VGS = -10 V,
ID = -6 A
VDD ≈ 24 V, VGS = 10 V,
ID = 6.5 A
VDD ≈ -24 V, VGS = -10 V,
ID = -6 A
VDD ≈ 24 V, VGS = 10 V,
ID = 6.5 A
Min Typ. Max Unit
24.1
nC
13.8
3.3 nC
3.0
5.6 nC
2.3
5 2011-03-14
Rev.2.0
5 Page 
TPCP8405
Fig. 8.2.7 IDR - VDS
Fig. 8.2.8 Capacitance - VDS
Fig. 8.2.9 Vth - Ta
Fig. 8.2.10 Dynamic Input/Output Characteristics
Fig. 8.2.11 PD - Ta
(Guaranteed Maximum)
11
2011-03-14
Rev.2.0
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TPCP8405.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCP8401 | Field Effect Transistor Silicon MOS Type | Toshiba Semiconductor |
| TPCP8402 | Field Effect Transistor Silicon MOS Type | Toshiba Semiconductor |
| TPCP8403 | Field Effect Transistor | Toshiba Semiconductor |
| TPCP8404 | Field Effect Transistor |  Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |