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| Fabricantes | NXP Semiconductors | |
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PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F
(SOT186A)
29 November 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to
175C. This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
• High efficiency due to low switching and conduction losses
• Isolated package
• Suitable for standard level gate drive
1.3 Applications
• AC-to-DC power supply equipment
• Motor control
• Server power supplies
• Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 10 A; VDS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 49 A
- - 55 W
4.5 6.4 8.5 mΩ
- 11.18 14.9 mΩ
- 30 - nC
- 100 - nC
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1 page  
NXP Semiconductors
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1 0.02
single shot
10-2
003aak427
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
10 tp (s) 102
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Isolation characteristics
Table 7. Isolation characteristics
Symbol
Parameter
Conditions
Cisol isolation capacitance
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
sinusoidal waveform; clean and dust
free
[1] f = 1 MHz
[1]
Min Typ Max Unit
- 10 - pF
- - 2500 V
8. Characteristics
Table 8. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 100 °C
PSMN8R5-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
Min Typ Max Unit
100 - - V
90 - - V
2.4 3 4 V
1- - V
- - 4.5 V
-
0.02 1
µA
- - 20 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
PSMN8R5-100XS
N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)
9. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
D1
D
E
P
q
T
L2
b1
L b2
123
b
e
e1
L1
wM
A
A1
mounting
base
j
K
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 b2 c D D1 E e e1 j
mm
4.6 2.9
4.0 2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT186A
3-lead TO-220F
K
L
L1
L2(1)
max.
P
0.6 14.4 3.30
0.4 13.5 2.79
3
3.2
3.0
Q
2.6
2.3
EUROPEAN
PROJECTION
q T(2) w
3.0
2.6
2.5
0.4
ISSUE DATE
02-04-09
06-02-14
Fig. 19. Package outline TO-220F (SOT186A)
PSMN8R5-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
© NXP B.V. 2012. All rights reserved
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