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BUK7628-55A Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BUK7628-55A
Beschreibung TrenchMOS stransistor Standard level FET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 13 Seiten
BUK7628-55A Datasheet, Funktion
BUK7528-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 34 A; Vsup 25 V;
RGS = 50 ; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 42 A
- - 99 W
- 23.8 28 m
- - 58 mJ






BUK7628-55A Datasheet, Funktion
NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
100
ID
(A)
80
18
16
12
11.5
60
10
10.5
VGS (V) = 11
40
20
0
0246
003aaf459
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0 4.5
8 10
VDS (V)
Tj = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
70
RDS(on)
(mΩ)
60
50
40
30
6
6.5
7
003aaf460
8
9
10
20
0
20 40 60 80 100
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
50
RDS(on)
(mΩ)
40
30
20
003aaf461
100
ID
(A)
80
60
40
20
003aaf462
Tj = 175 °C
Tj = 25 °C
10
6
10 14 18 22
VGS (V)
Tj = 25 °C; ID = 25 A
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
0 4 8 12
VGS (V)
VDS > ID x RDSon
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK7528-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK7628-55A pdf, datenblatt
NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK7528-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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