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PDF BUK7624-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK7624-55A | |
| Descripción | TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7524-55A; BUK7624-55A
TrenchMOS™ standard level FET
Rev. 02 — 01 March 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7524-55A in SOT78 (TO-220AB)
BUK7624-55A in SOT404 (D2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
BUK7524-55A; BUK7624-55A
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55 − − V
Tj = −55 °C
50 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
− 20 24 mΩ
− − 48 mΩ
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead 6mm from
package to centre of die
−
−
−
−
−
−
−
−
980
1310
pF
240 290 pF
150 210 pF
11 −
ns
56 −
ns
38 −
ns
31 −
ns
4.5 −
nH
from contact screw on
mounting base to centre of
die SOT78
−
3.5 −
nH
from upper edge of drain
mounting base to centre of
die SOT404
−
2.5 −
nH
Ls
internal source inductance from source lead to source
−
bond pad
7.5 −
nH
9397 750 08029
Product specification
Rev. 02 — 01 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
10. Soldering
BUK7524-55A; BUK7624-55A
TrenchMOS™ standard level FET
handbook, full pagewidth
1.50
2.25 2.15
10.85
10.60
10.50
7.50
7.40
1.70
8.15 8.35
1.50
4.60
8.275
4.85
7.95
0.30
3.00
solder lands
solder resist
occupied area
solder paste
Dimensions in mm.
Fig 18. Reflow soldering footprint for SOT404.
5.40
8.075
0.20
5.08
1.20
1.30
1.55
MSD057
9397 750 08029
Product specification
Rev. 02 — 01 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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| PDF Descargar | [ Datasheet BUK7624-55A.PDF ] | |
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